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Apr 22

Efficient and tunable narrowband second-harmonic generation by a large-area etchless lithium niobate metasurface

Optical resonances in nanostructures enable strong enhancement of nonlinear processes at the nanoscale, such as second-harmonic generation (SHG), with high-Q modes providing intensified light--matter interactions and sharp spectral selectivity for applications in filtering, sensing, and nonlinear spectroscopy. Thanks to the recent advances in thin-film lithium niobate (TFLN) technology, these key features can be now translated to lithium niobate for realizing novel nanoscale nonlinear optical platforms. Here, we demonstrate a large-area metasurface, realized by scalable nanoimprint lithography, comprising a slanted titanium dioxide (TiO_2) nanograting on etchless TFLN for efficient narrowband SHG. This is enabled by the optimal coupling of quasi-bound state in the continuum (q-BIC) modes with a narrowband pulsed laser pump. The demonstrated normalized SHG efficiency is 0.15%,cm^2/GW, which is among the largest reported for LN metasurfaces. The low pump peak intensity (3.64~kW/cm^2) employed, which enables SHG even by continuous-wave pumping, allows envisioning integrated and portable photonic applications. SHG wavelength tuning from 870 to 920~nm with stable output power as well as polarization control is also achieved by off-normal pump illumination. This versatile platform opens new opportunities for sensing, THz generation and detection, and ultrafast electro-optic modulation of nonlinear optical signals.

  • 11 authors
·
Jan 31

A molecular Ferroelectric thin film of imidazolium perchlorate on Silicon

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

  • 5 authors
·
Sep 30, 2023

Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO_3

In complex oxide materials, changes in electronic properties are often associated with changes in crystal structure, raising the question of the relative roles of the electronic and lattice effects in driving the metal-insulator transition. This paper presents a combined theoretical and experimental analysis of the dependence of the metal-insulator transition of NdNiO_3 on crystal structure, specifically comparing properties of bulk materials to one and two layer samples of NdNiO_3 grown between multiple electronically inert NdAlO_3 counterlayers in a superlattice. The comparison amplifies and validates a theoretical approach developed in previous papers and disentangles the electronic and lattice contributions, through an independent variation of each. In bulk NdNiO_3 the correlations are not strong enough to drive a metal-insulator transition by themselves: a lattice distortion is required. Ultra-thin films exhibit two additional electronic effects and one lattice-related effect. The electronic effects are quantum confinement, leading to dimensional reduction of the electronic Hamiltonian, and an increase in electronic bandwidth due to counterlayer induced bond angle changes. We find that the confinement effect is much more important. The lattice effect is an increase in stiffness due to the cost of propagation of the lattice disproportionation into the confining material.

  • 5 authors
·
Sep 30, 2018

Strong correlation behavior and Strong coupling superconductivity in (Ti1/4Hf1/4Nb1/4Ta1/4)1-xNix with the rich magnetic element Ni

Searching for new superconductors, especially unconventional superconductors, has been studied extensively for decades but remains one of the major outstanding challenges in condensed matter physics. Medium/high-entropy alloys (MEAs-HEAs) are new fertile soils of unconventional superconductors and generate widespread interest and questions on the existence of superconductivity in highly disordered materials. Here, we report on the effect of Ni-doped on the crystal structure and superconductivity properties of strongly coupled TiHfNbTa MEA. XRD results indicate that the maximum solid solution of (Ti1/4Hf1/4Nb1/4Ta1/4)1-xNix is about 7.7%. Resistivity, magnetic susceptibility, and specific heat measurements demonstrated that (Ti1/4Hf1/4Nb1/4Ta1/4)1-xNix HEAs are all bulk type-II superconductors and follow the trend of the increase of Tc with the increase of Ni-doped contents. The specific heat jump of all (Ti1/4Hf1/4Nb1/4Ta1/4)1-xNix are much larger than the BCS value of 1.43, suggesting all these HEAs are strongly coupled superconductors. Additionally, large Kadawaki-Woods ratio values suggest that there is a strong electron correlation effect in this system. The (Ti1/4Hf1/4Nb1/4Ta1/4)1-xNix HEA system is a new ideal material platform for the study of strong correlation behavior and strongly coupled superconductivity, which provides an insight into the physics of high-temperature superconductors or other unconventional superconductors.

  • 11 authors
·
Jul 29, 2025

Creation of single vacancies in hBN with electron irradiation

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

  • 9 authors
·
Mar 1, 2023

Superconducting Materials for Microwave Kinetic Inductance Detectors

The superconducting materials that make up an MKID have a significant effect on its performance. The T_c and normal state resistivity ρ_N of the film determine the penetration depth λ and therefore how much kinetic inductance it has. The ratio of kinetic inductance to total inductance (α), the volume of the inductor, and Q_m determines the magnitude of the response to incoming energy. The quasiparticle lifetime τ_qp is the characteristic time during which the MKID's surface impedance is modified by the incoming energy. Many materials have been explored for use in superconducting resonators and MKIDs, but that information is often not published or scattered around the literature. This chapter contains information and references on the work that has been done with thin film lithographed circuits for MKIDs over the last two decades. Note that measured material properties such as the internal loss quality factor Q_i and quasiparticle lifetime τ_qp vary significantly depending on how the MKID superconducting thin film is made and the system they are measured in, so it is best to interpret all stated values as typical but not definitive. Values are omitted in cases when there aren't enough measurements or there is too much disagreement in the literature to estimate a typical value. In order to be as complete as possible some unpublished results from the author's lab are included and can be identified by the lack of a reference. Unless noted all films are polycrystalline or amorphous.

  • 1 authors
·
Apr 28, 2020