Daily Papers

This work presents a novel monolithic 3D (M3D) FPGA architecture that leverages stackable back-end-of-line (BEOL) transistors to implement configuration memory and pass gates, significantly improving area, latency, and power efficiency. By integrating n-type (W-doped In_2O_3) and p-type (SnO) amorphous oxide semiconductor (AOS) transistors in the BEOL, Si SRAM configuration bits are substituted with a less leaky equivalent that can be programmed at logic-compatible voltages. BEOL-compatible AOS transistors are currently under extensive research and development in the device community, with investment by leading foundries, from which reported data is used to develop robust physics-based models in TCAD that enable circuit design. The use of AOS pass gates reduces the overhead of reconfigurable circuits by mapping FPGA switch block (SB) and connection block (CB) matrices above configurable logic blocks (CLBs), thereby increasing the proximity of logic elements and reducing latency. By interfacing with the latest Verilog-to-Routing (VTR) suite, an AOS-based M3D FPGA design implemented in 7 nm technology is demonstrated with 3.4x lower area-time squared product (AT^2), 27% lower critical path latency, and 26% lower reconfigurable routing block power on benchmarks including hyperdimensional computing and large language models (LLMs).

The OSIRIS detector is a subsystem of the liquid scintillator fillling chain of the JUNO reactor neutrino experiment. Its purpose is to validate the radiopurity of the scintillator to assure that all components of the JUNO scintillator system work to specifications and only neutrino-grade scintillator is filled into the JUNO Central Detector. The aspired sensitivity level of 10^{-16} g/g of ^{238}U and ^{232}Th requires a large (sim20 m^3) detection volume and ultralow background levels. The present paper reports on the design and major components of the OSIRIS detector, the detector simulation as well as the measuring strategies foreseen and the sensitivity levels to U/Th that can be reached in this setup.

A systematic understanding of Apple Silicon is lacking in the current landscape of hardware efficiency; research focus is largely centered on accelerating GPUs for large-scale training or inference on CUDA devices. This paper investigates Apple Silicon's unique memory architecture that offers a unified memory integrating CPU and GPU memory and its implications for on-device LLM inference. We decipher myths about whether Apple Silicon is efficient for on-device inference compared to competitors such as NVIDIA GPUs by directly conducting latency and throughput comparison benchmarks. We explain the performance gap between them through profiling low level hardware metrics - ALU utilization, memory bandwidth, buffer usage, cache residency etc. at runtime. We draw several insights regarding performance bottlenecks such as dequantization overhead, compute throughput and memory bandwidth. We debunk existing false claims regarding large language model inference such as compressing models to lower bit precision is a defacto promise for faster inference across all hardware platforms. We find that the large unified memory enables Apple Silicon to be both cost effective and efficient against NVIDIA GPUs for ultra large language models. Our large scale evaluation on 5 hardware testbeds incorporating three Apple M-series devices: M2 Ultra, M2 Max and M4 Pro and two NVIDIA GPUs: NVIDIA RTX A6000, a multi GPU setup with 2xNVIDIA RTX A6000, 5 model scales ranging from 8B to 405B parameters and 14 quantization schemes gives an understanding of how Apple Silicon fits within the paradigm of on-device LLM inference. Our analysis reveals multiple resource interdependencies and unexpected findings, while also quantifying established insights. To the best of our knowledge, this study makes the first attempt to present a thorough characterization and analysis of Apple Silicon for on-device inference.

The excellent performance of modern deep neural networks (DNNs) comes at an often prohibitive training cost, limiting the rapid development of DNN innovations and raising various environmental concerns. To reduce the dominant data movement cost of training, process in-memory (PIM) has emerged as a promising solution as it alleviates the need to access DNN weights. However, state-of-the-art PIM DNN training accelerators employ either analog/mixed signal computing which has limited precision or digital computing based on a memory technology that supports limited logic functions and thus requires complicated procedure to realize floating point computation. In this paper, we propose a spin orbit torque magnetic random access memory (SOT-MRAM) based digital PIM accelerator that supports floating point precision. Specifically, this new accelerator features an innovative (1) SOT-MRAM cell, (2) full addition design, and (3) floating point computation. Experiment results show that the proposed SOT-MRAM PIM based DNN training accelerator can achieve 3.3times, 1.8times, and 2.5times improvement in terms of energy, latency, and area, respectively, compared with a state-of-the-art PIM based DNN training accelerator.

Over the last three decades, innovations in the memory subsystem were primarily targeted at overcoming the data movement bottleneck. In this paper, we focus on a specific market trend in memory technology: 3D-stacked memory and caches. We investigate the impact of extending the on-chip memory capabilities in future HPC-focused processors, particularly by 3D-stacked SRAM. First, we propose a method oblivious to the memory subsystem to gauge the upper-bound in performance improvements when data movement costs are eliminated. Then, using the gem5 simulator, we model two variants of LARC, a processor fabricated in 1.5 nm and enriched with high-capacity 3D-stacked cache. With a volume of experiments involving a board set of proxy-applications and benchmarks, we aim to reveal where HPC CPU performance could be circa 2028, and conclude an average boost of 9.77x for cache-sensitive HPC applications, on a per-chip basis. Additionally, we exhaustively document our methodological exploration to motivate HPC centers to drive their own technological agenda through enhanced co-design.

Recent advances in machine learning (ML) have spotlighted the pressing need for computing architectures that bridge the gap between memory bandwidth and processing power. The advent of deep neural networks has pushed traditional Von Neumann architectures to their limits due to the high latency and energy consumption costs associated with data movement between the processor and memory for these workloads. One of the solutions to overcome this bottleneck is to perform computation within the main memory through processing-in-memory (PIM), thereby limiting data movement and the costs associated with it. However, DRAM-based PIM struggles to achieve high throughput and energy efficiency due to internal data movement bottlenecks and the need for frequent refresh operations. In this work, we introduce OPIMA, a PIM-based ML accelerator, architected within an optical main memory. OPIMA has been designed to leverage the inherent massive parallelism within main memory while performing high-speed, low-energy optical computation to accelerate ML models based on convolutional neural networks. We present a comprehensive analysis of OPIMA to guide design choices and operational mechanisms. Additionally, we evaluate the performance and energy consumption of OPIMA, comparing it with conventional electronic computing systems and emerging photonic PIM architectures. The experimental results show that OPIMA can achieve 2.98x higher throughput and 137x better energy efficiency than the best-known prior work.

Large language models (LLMs) have emerged due to their capability to generate high-quality content across diverse contexts. To reduce their explosively increasing demands for computing resources, a mixture of experts (MoE) has emerged. The MoE layer enables exploiting a huge number of parameters with less computation. Applying state-of-the-art continuous batching increases throughput; however, it leads to frequent DRAM access in the MoE and attention layers. We observe that conventional computing devices have limitations when processing the MoE and attention layers, which dominate the total execution time and exhibit low arithmetic intensity (Op/B). Processing MoE layers only with devices targeting low-Op/B such as processing-in-memory (PIM) architectures is challenging due to the fluctuating Op/B in the MoE layer caused by continuous batching. To address these challenges, we propose Duplex, which comprises xPU tailored for high-Op/B and Logic-PIM to effectively perform low-Op/B operation within a single device. Duplex selects the most suitable processor based on the Op/B of each layer within LLMs. As the Op/B of the MoE layer is at least 1 and that of the attention layer has a value of 4-8 for grouped query attention, prior PIM architectures are not efficient, which place processing units inside DRAM dies and only target extremely low-Op/B (under one) operations. Based on recent trends, Logic-PIM adds more through-silicon vias (TSVs) to enable high-bandwidth communication between the DRAM die and the logic die and place powerful processing units on the logic die, which is best suited for handling low-Op/B operations ranging from few to a few dozens. To maximally utilize the xPU and Logic-PIM, we propose expert and attention co-processing.

Practical large language model (LLM) services may involve a long system prompt, which specifies the instructions, examples, and knowledge documents of the task and is reused across numerous requests. However, the long system prompt causes throughput/latency bottlenecks as the cost of generating the next token grows w.r.t. the sequence length. This paper aims to improve the efficiency of LLM services that involve long system prompts. Our key observation is that handling these system prompts requires heavily redundant memory accesses in existing causal attention computation algorithms. Specifically, for batched requests, the cached hidden states (i.e., key-value pairs) of system prompts are transferred from off-chip DRAM to on-chip SRAM multiple times, each corresponding to an individual request. To eliminate such a redundancy, we propose RelayAttention, an attention algorithm that allows reading these hidden states from DRAM exactly once for a batch of input tokens. RelayAttention is a free lunch: it maintains the generation quality while requiring no model retraining, as it is based on a mathematical reformulation of causal attention.

The rapid advancements in memory systems, CPU technology, and emerging technologies herald a transformative potential in computing, promising to revolutionize memory hierarchies. Innovations in DDR memory are delivering unprecedented bandwidth, while advancements in on-chip wireless technology are reducing size and increasing speed. The introduction of godspeed wireless transceivers on chip, alongside near high-speed DRAM, is poised to directly facilitate memory requests. This integration suggests the potential for eliminating traditional memory hierarchies, offering a new paradigm in computing efficiency and speed. These developments indicate a near-future where computing systems are significantly more responsive and powerful, leveraging direct, high-speed memory access mechanisms.

A MICRO 2024 best paper runner-up publication (the Mess paper) with all three artifact badges awarded (including "Reproducible") proposes a new benchmark to evaluate real and simulated memory system performance. In this paper, we demonstrate that the Ramulator 2.0 simulation results reported in the Mess paper are incorrect and, at the time of the publication of the Mess paper, irreproducible. We find that the authors of Mess paper made multiple trivial human errors in both the configuration and usage of the simulators. We show that by correctly configuring Ramulator 2.0, Ramulator 2.0's simulated memory system performance actually resembles real system characteristics well, and thus a key claimed contribution of the Mess paper is factually incorrect. We also identify that the DAMOV simulation results in the Mess paper use wrong simulation statistics that are unrelated to the simulated DRAM performance. Moreover, the Mess paper's artifact repository lacks the necessary sources to fully reproduce all the Mess paper's results. Our work corrects the Mess paper's errors regarding Ramulator 2.0 and identifies important issues in the Mess paper's memory simulator evaluation methodology. We emphasize the importance of both carefully and rigorously validating simulation results and contacting simulator authors and developers, in true open source spirit, to ensure these simulators are used with correct configurations and as intended. We encourage the computer architecture community to correct the Mess paper's errors. This is necessary to prevent the propagation of inaccurate and misleading results, and to maintain the reliability of the scientific record. Our investigation also opens up questions about the integrity of the review and artifact evaluation processes. To aid future work, our source code and scripts are openly available at https://github.com/CMU-SAFARI/ramulator2/tree/mess.

Singular Value Decomposition (SVD) has recently seen a surge of interest as a simple yet powerful tool for large language models (LLMs) compression, with a growing number of works demonstrating 20-80% parameter reductions at minimal accuracy loss. Previous SVD-based approaches have focused primarily on reducing the memory footprint of model weights, largely overlooking the additional activation memory overhead incurred during inference when applying truncated factors via standard dense CUDA kernels. Our experiments demonstrate that this activation overhead, scaling with sequence length and hidden dimension, prevents current SVD compression techniques from achieving any reduction in peak inference memory, thereby limiting their viability for real-world, on-device deployments. We introduce FlashSVD, a novel, end-to-end rank-aware streaming inference framework specifically designed for SVD-compressed large language models. FlashSVD can be seamlessly integrated with any model that employs SVD-based methods for parameter reduction. By fusing low-rank projection kernels directly into both the self-attention and feed-forward network (FFN) pipelines, FlashSVD avoid materializing full-size activation buffers. Instead, small tiles of the truncated factors are loaded into on-chip SRAM, multiplied and reduced on the fly, and immediately evicted, preserving high GPU occupancy and adding no extra latency. On standard encoder benchmarks (e.g., BERT-Base), FlashSVD cuts peak activation memory by up to 70.2% and intermediate transient memory by 75%, all while incur no accuracy loss with upstreaming compression methods, offering a practical path toward memory-constrained deployment of low-rank LLMs.

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable nonvolatile memory designs. While various nonvolatile memory technologies, including Non-destructive readout, vortex transitional memory (VTM), and magnetic memory, have been explored, achieving a superconductor random-access memory (RAM) crossbar array remains challenging. This paper introduces a novel, nonvolatile, high-density, and scalable VTM cell design for SCE applications. Our proposed design addresses scaling issues while boasting zero static power consumption characteristics. Our design leverages current summation, enabling analog multiply-accumulate operations -an essential feature for many in-memory computational tasks. We demonstrate the efficacy of our approach with a 32 x 32 superconductor memory array operating at 20 GHz. This design effectively addresses scaling issues and utilizes current summation that can be used for analog multiply-accumulate operations. Additionally, we showcase the accumulation property of the memory through analog simulations conducted on an 8 x 8 superconductor crossbar array.